vishay tlmd310. document number 83037 rev. 1.8, 31-aug-04 vishay semiconductors www.vishay.com 1 e3 pb pb-free 19225 high intensity smd led description these new devices have been designed to meet the increasing demand for surface mounting technology. this device is used for outdoor or for low power appli- cations. the package of the tlmd310. is the plcc-2 (equiv- alent to a size b tantalum capacitor). it consists of a lead frame which is embedded in a white thermoplast. the reflector inside this package is filled up with clear epoxy. features ? smd leds with exceptional brightness luminous intensity categorized compatible with automatic placement equipment eia and ice standard package compatible with infrared, vapor phase and wave solder processes according to cecc available in 8 mm tape low profile package non-diffused lens: excellent for coupling to light pipes and backlighting low power consumption luminous intensity ratio in one packaging unit i vmax /i vmin 2.0, optional 1.6 lead-free device applications automotive: backlighting in dashboards and switches telecommunication: indicator and backlighting in telephone and fax indicator and backlight for audio and video equipment indicator and backlight for battery driven equipment small indicator for outdoor applications indicator and backlight in office equipment flat backlight for lcds, switches and symbols general use parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tlmd310. part color, luminous intensity angle of half intensity ( ? ) technology TLMD3100 red, i v > 20 mcd (typ.) 60 gaaias on gaas tlmd3101 red, i v = (16 to 50) mcd 60 gaaias on gaas tlmd3105 red, i v = (10 to 32) mcd 60 gaaias on gaas parameter test condition symbol value unit reverse voltage v r 6v dc forward current i f 30 ma surge forward current t p 10 si fsm 0.5 a power dissipation t amb 60 c p v 100 mw
www.vishay.com 2 document number 83037 rev. 1.8, 31-aug-04 vishay tlmd310. vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlmd310. 1) in one packing unit i vmax /i vmin 1.6 2) in one packing unit i vmax /i vmin 2.0 junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ ambient mounted on pc board (pad size > 16 mm 2 ) r thja 400 k/w parameter test condition part symbol min ty p. max unit luminous intensity 2) i f = 10 ma TLMD3100 i v 10 20 mcd tlmd3101 i v 16 50 mcd luminous intensity 1) i f = 10 ma tlmd3105 i v 10 32 mcd luminous intensity i f = 1 ma i v 2mcd dominant wavelength i f = 10 ma d 648 nm peak wavelength i f = 10 ma p 650 nm angle of half intensity i f = 10 ma ? 60 deg forward voltage i f = 20 ma v f 1.8 2.2 v reverse voltage i r = 10 av r 615 v junction capacitance v r = 0, f = 1 mhz c j 15 pf parameter test condition symbol value unit
vishay tlmd310. document number 83037 rev. 1.8, 31-aug-04 vishay semiconductors www.vishay.com 3 typical characteristics (t amb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature for ingan figure 3. pulse forward current vs. pulse duration 100 80 60 40 0 25 50 75 100 125 p - power dissipation ( mw ) v t amb - ambient temperature ( c) 95 10904 20 0 0 10 20 30 40 60 i - forward current ( ma) f 95 10905 50 t amb - ambient temperature ( c) 100 80 60 40 20 0 0.01 0.1 1 10 1 10 100 1000 10000 t p - pulse length ( ms ) 100 95 9985 i - forward current ( ma ) f dc t p /t = 0.005 0.5 0.2 0.1 0.01 0.05 0.02 t amb <60 c figure 4. rel. luminous intensity vs. angular displacement figure 5. figure 6. rel. luminous intensity vs. ambient temperature 0.4 0.2 0 0.2 0.4 0.6 95 10319 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity vre l 1 10 100 95 10014 1 1.5 2 2.5 3 i - forward current ( ma ) f v f - forward voltag e(v) red 0 95 10015 20 40 60 80 100 i - relative luminous intensity v rel t amb - ambient temperature ( c) 0 0.4 0.8 1.2 1.6 2.0 red
www.vishay.com 4 document number 83037 rev. 1.8, 31-aug-04 vishay tlmd310. vishay semiconductors figure 7. rel. lumin. intensity vs. forw. current/duty cycle figure 8. relative luminous intensity vs. forward current figure 9. relative intensity vs. wavelength 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10262 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i - relative luminous intensity v rel 2.0 red i fav = 10 ma, const. 10 0.1 1 0.01 0.1 1 10 100 95 10016 i - relative luminous intensity v rel i f - forward current ( ma ) red 600 620 640 660 680 0 0.2 0.4 0.6 0.8 1.2 700 95 10018 i - relative luminous intensity v rel - wavelength ( nm ) 1.0 red
vishay tlmd310. document number 83037 rev. 1.8, 31-aug-04 vishay semiconductors www.vishay.com 5 package dimensions in mm 95 11315 mounting pad layout 3.5 0.2 0.85 1.65 + 0.10 - 0.05 pin identification 2.8 + 0.15 2.2 ? 2.4 3 + 0.15 1.2 2.6 (2.8) 1.6 (1.9) 4 4 area covered with solder resist dimensions: ir and vaporphase (wave soldering) technical drawings according to din specifications drawing-no. : 6.541-5025.01-4 issue: 7; 05.04.04 c a
www.vishay.com 6 document number 83037 rev. 1.8, 31-aug-04 vishay tlmd310. vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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